Development of Microwave SiGe Heterojunction Bipolar Transistors

• 作 者: 贾宏勇 朱文斌 刘志农 陈培毅 钱佩信
• 出 处: 半导体学报
• 发表日期: 2000年10期
• 关键词: SiGe fabrication junction breakdown etching annealing embedding definitely capab

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut|off frequency is 12.5GHz which is measured in packaged form.

The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home | made high vacuum / rapid thermal processing chemical vapor deposition equipment. HBTs show good performance and industrial use value. The current gain is beyond 100; the breakdown voltage BV ceo is 3.3V, and the cut | off frequency is 12.5GHz which is measured in packaged form.