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通过固相反应烧结在高温下制备出高致密度的纯相CuAlO2陶瓷靶材。采用脉冲激光沉积技术在蓝宝石和石英衬底上制备了CuAlO2薄膜,为进一提高CuAlO2薄膜性能,对样品进行了退火处理。通过X射线衍射、扫描电镜、紫外-可见光分光光度计和霍尔效应检测仪对样品进行表征,研究了退火条件对薄膜结构、形貌、光学性能和电学性能的影响,并获得了最佳退火工艺参数:退火气氛为一个大气压下的氩气气氛,退火温度1000℃,退火时间30 min。在最佳退火条件下,经过退火处理后的CuAlO2薄膜在可见光下的光学透过率达70%~80%,带隙宽度3.5 eV,电阻率16.67Ω·cm。
High-density pure phase CuAlO2 ceramic targets were prepared by solid state reaction sintering at high temperature. The CuAlO2 films were prepared on the sapphire and quartz substrates by pulsed laser deposition. In order to further improve the properties of CuAlO2 thin films, the samples were annealed. The samples were characterized by X-ray diffraction, scanning electron microscopy, UV-visible spectrophotometer and Hall effect detector. The effects of annealing conditions on the structure, morphology, optical properties and electrical properties of the films were investigated. Process parameters: The annealing atmosphere is an atmospheric argon atmosphere, annealing temperature 1000 ℃, annealing time 30 min. Under the optimal annealing conditions, the CuAlO2 film after annealing treatment has an optical transmittance of 70% -80% under visible light, a band gap of 3.5 eV and a resistivity of 16.67 Ω · cm.