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利用溶胶-凝胶法在氧化铟锡(ITO)衬底上制备了多铁性铁酸铋薄膜,发现这种方法制备的薄膜具有典型的钙钛矿晶体结构,并表现出较好的介电性能。薄膜的漏电和铁电性能测试表明由于漏电流比较大,薄膜在室温下表现出不饱和的电滞回线,难以精确获得剩余极化强度值。而在外加扫描电压或电流时,薄膜均呈现出明显的阻变效应,可应用于阻变信息存储。最后,分析讨论了元素掺杂对薄膜铁电性能和阻变效应的影响。
A multiferroic bismuth ferrite thin film was prepared on a indium tin oxide (ITO) substrate by a sol-gel method. It was found that the thin film prepared by this method has the typical perovskite crystal structure and shows a good dielectric performance. Leakage and ferroelectric properties of the thin films show that due to the large leakage current, the thin films show an unsatisfactory hysteresis loop at room temperature, making it difficult to accurately obtain the remanent polarization values. In addition, when the scanning voltage or current is applied, the films show obvious resistance change effect and can be applied to the resistance change information storage. Finally, the influence of element doping on the ferroelectric properties and the resistance-change effect of the films is discussed and discussed.