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我们已研制了一种新的应用于长期性皮层内刺激的三维电极阵列几何状制造方法。这个以硅为基底的阵列由4.2×4.2×0.12mm厚度的单晶基片所组成。在此基片上设计了100个具有传导性的硅针,这些硅针经锐化后以利于穿透皮层。其中的每一个硅针都与其它的硅针电绝缘,且每一个硅针的底部有大约0.09mm厚和1.5mm长。每一个硅针的锐化端都覆以铂以利于将电荷传导入神经组织。下述的一些过程都用于制造这个阵列:(1)贯穿n型硅块热迁移100个铝片,该过程可按照与PN结相反的方式产生彼此之间互相分离的高传导性的P~+硅轨迹;(2)将产生单个的P~+
We have developed a new method for the fabrication of three-dimensional electrode array geometries for long-term intracortical stimulation. This silicon-based array consists of a single crystal substrate of 4.2 x 4.2 x 0.12 mm thickness. 100 conductive silicon needles were designed on this substrate, and the silicon needles were sharpened to facilitate the penetration of the skin. Each of these silicon needles is electrically insulated from the other silicon needles, and the bottom of each silicon needles is about 0.09 mm thick and 1.5 mm long. The sharpened end of each silicon needle is covered with platinum to facilitate the conduction of charge into the nerve tissue. Some of the following processes are used to make this array: (1) Thermal transfer of 100 aluminum sheets through an n-type silicon block, which produces highly conductive P ~ + Silicon trace; (2) will produce a single P ~ +