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采用金属有机沉积(MOD)技术在La Al O3(LAO)、Y稳定的氧化锆(YSZ)和Ni-W衬底上沉积了Ce O2缓冲层薄膜,并研究了衬底与缓冲层的晶格失配对其外延生长的影响。结果表明,随着衬底和缓冲层薄膜之间晶格失配的增大,缓冲层薄膜内部的压应变增加,晶界浓度增加,晶粒生长速率减小。衬底和缓冲层薄膜之间的晶格失配越小,越有利于薄膜织构度的增大。Ce O2薄膜的表面形貌及粗糙度的演化对衬底和缓冲层薄膜之间的晶格失配并没有明确的依赖关系。
Ce 02 buffer layer films were deposited on LaAl O3 (LAO), YSZ and Ni-W substrates by metal organic deposition (MOD) technique. The lattice of the substrate and buffer layer Effect of mismatch on its epitaxial growth. The results show that with the increase of lattice mismatch between the substrate and the buffer layer, the compressive strain in the buffer layer increases, the grain boundary concentration increases and the grain growth rate decreases. The smaller the lattice mismatch between the substrate and the buffer layer film, the more favorable the increase of the texture of the film. The evolution of the surface morphology and roughness of the Ce O2 film has no clear dependence on the lattice mismatch between the substrate and the buffer film.