Simultaneous quality improvement of the roughness and refractive index of SiC thin films

• 作 者: Gh.Sareminia H.Simchi A.Ostovari L.Lavasanpour
• 机 构: Semiconductor Science and Technology(SST),Department of Physics,Iran University of Science and Techn
• 出 处: 半导体学报
• 发表日期: 2012年06期
• 关键词: SiC PECVD RFTIR thickness measurement refractive index

We deposite silicon carbide thin layers on cleaned Si(100) substrates using the plasma enhanced chemical vapor deposition method,and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature,and that the refractive index is increased by increasing the substrate temperature.This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.

We deposite silicon carbide thin layers on cleaned Si (100) substrates using the plasma enhanced chemical vapor deposition method, and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It shows all both deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature, and that the refractive index is increased by increasing the substrate temperature. This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.