论文部分内容阅读
利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn1-xCoxO(x=0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn1-xCoxO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn1-xCoxO稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn1-xCoxO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn1-xCoxO产生室温铁磁性的主要原因.
The structure and magnetic properties of Zn1-xCoxO (x = 0.01,0.02) diluted magnetic semiconductor films prepared by pulsed laser vapor deposition were investigated by X-ray absorption fine structure, X-ray diffraction and magnetic measurements.The magnetic measurements showed that the Zn1-xCoxO samples Have room temperature ferromagnetism.X-ray diffraction results show that the film samples have a well-wurtzite structure.Fluorescence X-ray absorption fine structure test results show that pulsed laser vapor deposition prepared samples of all the Co ions into the ZnO lattice In the Zn1-xCoxO dilute magnetic semiconductors.Analysis of the near-edge structure of the X-ray absorption spectra confirmed the existence of O vacancies in Zn1-xCoxO films, indicating that Co ions and O vacancies Interaction is the main reason for inducing room temperature ferromagnetism of Zn1-xCoxO.