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提出了一种基于掺金硅的全光学宽带太赫兹波幅度调制器,研究了金(Au)点阵掺杂后硅(Si)体内的少数载流子寿命及其太赫兹波调制特性.实验结果表明,掺杂的Au原子为Si中的光生电子-空穴对提供了有效复合中心,使其少数载流子寿命由原来十几微秒降低至110 ns左右.利用波长915 nm调制激光作为抽运光源,在340 GHz载波的动态调制测试中获得4.3 MHz的调制速率和21%的调制深度,使Si基调制器的调制速率提高了两个数量级.该全光太赫兹调制器可工作在整个太赫兹频段内,具有极化不敏感特性,因而在太赫兹波高速和宽带调控方面具有重要的应用价值,也是构建光控型Si基太赫兹功能器件的重要基础.
An all-optical wideband terahertz-wave amplitude modulator based on gold-doped silicon was proposed to study the minority carrier lifetime and the terahertz modulation characteristics of the silicon (Si) The results show that the doped Au atoms provide an effective recombination center for photogenerated electron-hole pairs in Si, reducing the minority carrier lifetime from about ten microseconds to about 110 ns. Using a laser with a wavelength of 915 nm as the Pumping the light source and achieving a modulation rate of 4.3 MHz and a modulation depth of 21% in a dynamic modulation test of a 340 GHz carrier increased the modulation rate of the Si-based modulator by two orders of magnitude. The all-optical THz modulator operates over the entire In the terahertz band, it has polarization insensitivity and therefore has important application value in terahertz-wave high-speed and broadband regulation. It is also an important foundation for constructing light-control Si-based terahertz functional devices.