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采用射频磁控溅射法在Pt/TiOx/SiO2/Si基片上制备了以BaPbO3(BPO)为缓冲层的Pb(Zr0.52,Ti0.48)Nb0.04O3(Nb掺杂PZT,PZTN)薄膜.通过调整BPO层厚度,为该PZTN薄膜引入了不同的张应力.当BPO层厚度分别为68nm和135nm时,PZTN薄膜呈现随机取向,采用2θ-sin2ψ法测得薄膜的张应力为0.786和0.92GPa.电学测试表明,张应力较大的PZTN薄膜具有更好的铁电和漏电流性能.当PZTN薄膜张应力为0.786GPa时,剩余极化Pr和矫顽场Ec分别为41.2μC/cm2和70.7kV/cm,在+5V下漏电流密度分别为6.57×10-7A/cm-2;而当张应力增为0.92GPa时,剩余极化Pr增为44.1μC/cm2,矫顽场Ec减为58.1kV/cm,+5V下漏电流密度为5.54×10-8A/cm-2.以掠射方式对两种PZTN薄膜做精细扫描,并结合结构精修进一步分析,分析表明张应力较大的PZTN薄膜中单斜相成份较多,这可能是其铁电性能更加优异的原因.
The films of Pb (Zr0.52, Ti0.48) Nb0.04O3 (Nb-doped PZT, PZTN) with BaPbO3 (BPO) as buffer layer were prepared on Pt / TiOx / SiO2 / Si substrates by RF magnetron sputtering By adjusting the thickness of BPO layer, different tensile stresses were introduced into the PZTN films.When the thickness of BPO layers were 68nm and 135nm, PZTN films were randomly oriented and the tensile stress of films was 0.786 and 0.92 using 2θ-sin2ψ method The results of electrical tests show that the PZTN thin films with higher tensile stress have better ferroelectric and leakage current performance. When the tensile stress of PZTN thin film is 0.786GPa, the remanent polarization Pr and coercive field Ec are 41.2μC / cm2 and 70.7kV / cm. The leakage current density at + 5V is 6.57 × 10-7 A / cm-2 respectively. When the tensile stress increases to 0.92GPa, the remanent polarization Pr increases to 44.1μC / cm2 and the coercive field Ec decreases The leakage current density is 5.54 × 10-8 A / cm-2 at +5 V. The two PZTN thin films are scanned by grazing mode and further analyzed with the structure refinement. The analysis shows that the tensile stress is larger Of PZTN films have more monoclinic phase components, which may be the reason for its more excellent ferroelectric performance.