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采用一种简单的旋涂热蒸发方法在InP衬底上制备出CdSxSe1-x量子点.利用变温光致发光谱(温度范围:10～300K)研究CdSxSe1-x量子点的光学特性.在温度为180～200K范围内,光致发光谱的积分强度随温度升高呈现出一种异常现象.当温度由10K升至300K时,带隙能红移61.34meV.根据Vegard定律,由X射线衍射数据和室温光致发光谱峰位能量计算得到CdSxSe1-x量子点中S和Se的成分比为0.9:0.1.此外,通过光致发光谱峰位能量和曲线拟合得到CdS0.9Se0.1量子点材料Varshni关系参数为:α=(3.5±0.1)10-4eV/K,β=(210±10)K.
CdSxSe1-x quantum dots were prepared on InP substrate by a simple spin-on-thermal evaporation method. The optical properties of CdSxSe1-x quantum dots were studied by means of temperature-dependent photoluminescence (temperature range 10 ~ 300K) In the range of 180 ~ 200K, the integral intensity of photoluminescence spectrum showed an anomaly with increasing temperature.When the temperature was increased from 10K to 300K, the bandgap could be red-shifted by 61.34meV.According to Vegard’s law, the X-ray diffraction data And the room-temperature photoluminescence peak energy of CdSxSe1-x quantum dots calculated S: Se component ratio of 0.9: 0.1. In addition, through the photoluminescence peak energy and curve fitting CdS0.9Se0.1 quantum dots The material Varshni relationship parameters are: α = (3.5 ± 0.1) 10-4eV / K, β = (210 ± 10) K.