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基于低噪声赝配AlGaAs/InGaAs/GaAs HFET技术的进展,研制了可同时应用于低噪声和功率放大器的新一代器件。改进低噪声结构,以提高击穿电压,使之超过8V,并获得了超过800mA/mm的漏极电流密度。这是通过改变掺杂方案实现的。这种材料的0.25μm器件实验显示,它具有180GHz的截止频率和在18GHz时,最小噪声系数低于1dB。作为实验,制作了一个二级低噪声放大器的MMIC(微波单片集成电路)。在28GHz时,最小噪声系数为2.2dB,增益达到18dB。这是组合式发射/接收组件达到中功率水平的基础。
Based on the progress of low-noise pseudo-AlGaAs / InGaAs / GaAs HFET technology, a new generation of devices that can be simultaneously applied to low noise and power amplifiers is developed. Improve the low noise structure to improve the breakdown voltage, so that it exceeds 8V, and get more than 800mA / mm drain current density. This is done by changing the doping scheme. 0.25μm device experiments on this material have shown that it has a 180GHz cutoff frequency and a minimum noise figure of less than 1dB at 18GHz. As an experiment, a two-stage low noise amplifier MMIC (microwave monolithic integrated circuit) was fabricated. At 28GHz, the minimum noise figure is 2.2dB with a gain of 18dB. This is the basis for the combined transmit / receive component to achieve medium power levels.