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对GaAs/Al_xGa_(1-x)As量子阱材料进行的光致发光(PL),横断面透射电子显微镜(XTEM)和反射电子显微镜(REM)的研究结果表明量子阱材料的结构质量对其光电性能有一定影响。另外,也观察到分子束外延对改进异质结界面的平整度有明显作用。
The results of photoluminescence (PL), cross-sectional transmission electron microscopy (XTEM) and reflection electron microscopy (TEM) studies of GaAs / Al_xGa_ (1-x) As quantum well materials show that the structural quality of the quantum well material is not as good Performance has a certain impact. In addition, it is also observed that molecular beam epitaxy has a significant effect on improving the flatness of the heterojunction interface.