The improvement of Al_2O_3 /AlGaN/GaN MISHEMT performance by N_2 plasma pretreatment

• 作 者: 冯倩 田园 毕志伟 岳远征 倪金玉 张进成 郝跃 杨林安
• 机 构: School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials
• 出 处: Chinese Physics B
• 发表日期: 2009年07期
• 关键词: AlGaN pretreatment photoelectron transistor leakage dielectric magnitude drain b

This paper discusses the effect of N 2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3 /AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor(MISHEMT),with Al2O3 deposited by atomic layer deposition.The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3 /AlGaN interface was pretreated by N 2 plasma.Furthermore,effects of N 2 plasma pretreatment on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.

This paper discusses the effect of N 2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3 / AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT), with Al2O3 deposited by atomic layer deposition. The results indicated that the gate leakage was decreased two orders of magnitude after the Al 2 O 3 / AlGaN interface was pretreated by N 2 plasma.Furthermore, effects of N 2 plasma pretreatment on the electrical properties of the AlGaN / Al 2 O 3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.