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研究了高剂量氮离子注入硅所形成的高阻层.对该层的研究将有助于使离子注入技术应用于半导体集成电路的隔离工艺. 选用电阻率为0.5Ω-cm,<111>取向的N型硅单晶片作衬底.氮离子注入能量为80keV,注入剂量用1～2×10~(17)cm~(-2),注入后表面可以形成高阻层.这一层的物理、化学、电学性能均较稳定. 用俄歇电子谱仪、背散射沟道技术、红外光谱仪、光电子谱仪等手段对该层的晶体结构及化学键合机理进行了分析.所得结果证明,注入的氮呈高斯分布,该注入层是无序的氮化硅与硅的混合结构. 用8～10Ω-cm的P型硅单晶也可以得到同样的结果.
The high resistance layer formed by high dose nitrogen ion implantation is studied.The research of this layer will be helpful for the ion implantation technology to be used in the isolation process of semiconductor integrated circuits.Its resistivity of 0.5Ω-cm, <111> N-type silicon single crystal substrate as substrate.Nitrogen implantation energy of 80keV, with a dose of 1 ~ 2 × 10 ~ (17) cm ~ (-2), the surface can be injected into the high resistance layer.This layer of physical , The chemical and electrical properties are relatively stable.The crystal structure and chemical bonding mechanism of this layer were analyzed by means of Auger electron spectroscopy, backscattering channel, infrared spectroscopy, photoelectron spectroscopy, etc. The results show that the implanted The nitrogen shows a Gaussian distribution, and the implanted layer is a disordered mixed structure of silicon nitride and silicon. The same result can be obtained with a P-type silicon single crystal of 8 to 10 Ω-cm.