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用XeCl准分子激光器对氢化非晶硅（a－Si：H）薄膜进行了诱导晶化处理。测量了结晶膜的椭偏谱。利用多层膜模型与Bruggeman有效介质近似（B－EMA）分析了结晶膜的微结构特性。研究表明：低能量密度辐照形成的结晶层需用含有a－Si：H的EMA混合物表征，说明其结晶度相对较低；而高能量密度辐照形成的结晶层，因其结晶度较高，可用不含a－Si：H的EMA混合物表征．在结晶膜与衬底之间形成了互混层，其厚度随能量密度增大而增大。当能量密度较高时，结晶层会与互混层剥离．采用椭偏谱数据拟合得到Si浓度的深度剖面分布后，可据此重构结晶膜的三维表面形貌图．
Hydrogenated amorphous silicon (a-Si: H) thin films were induced to crystallize by XeCl excimer laser. The ellipsometry of the crystalline film was measured. The microstructural properties of the crystalline films were analyzed by using multilayer film model and Bruggeman effective medium approximation (B-EMA). The results show that the crystalline layer formed by low energy density irradiation needs to be characterized by the mixture of EMA containing a-Si: H, indicating that its crystallinity is relatively low. However, the crystalline layer formed by high energy density irradiation has higher crystallinity , Which can be characterized by EMA mixtures without a-Si: H. An intermixed layer is formed between the crystalline film and the substrate, the thickness of which increases as the energy density increases. When the energy density is high, the crystalline layer will peel off from the miscible layer. After fitting the depth profile of Si concentration by fitting the data of the ellipsometer, the three-dimensional surface topography of the crystalline film can be reconstructed.