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Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique, which is based on H+ ions implantation, anodic bonding and layer transfer. Structures of the resulting thin film silicon on glass (SOG) are characterized by transmission-electron microscopy, scanning electron microscopy and Raman spectroscopy. The results show that SOG substrates fabricated by the smart-cut have advantages of steep top Si/glass interface and good monocrystalline Si quality. The Hall-effect measurement indicates that the single crystalline SOG substrates have a better electrical property compared with polycrystalline silicon SOG substrates.