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金属-Al_2O_3-SiO_2-硅(MAOS)场效应晶体管的基本特性和电荷存贮特性作为氧化物厚度的函数已进行了研究。测量了SiO_2膜为50A°和Al_2O_3为700A°的器件的典型电荷存贮特性。依据隧道效应机理电子和空穴穿过薄的SiO_2层的传输过程和从Al电极的电子注入对结果进行了解释。在MAOS结构中,阈值电压从初始状态漂移在大约23伏以内。而且可以在适当应力条件下改变电场反转控制。至少10~6次以上。可以认为电荷存贮时间在室温下实际上是无限长的,在150℃是10~6小时数量级。在反复循环施加电场应力下器件参数的故障行为也可依据在Al_2O_3膜内和在Al_2O_3和SiO_2膜界面的电子积累予以考虑。
The basic properties and charge storage characteristics of a metal-Al 2 O 3 -SiO 2 -silicon (MAOS) field-effect transistor have been studied as a function of oxide thickness. The typical charge storage characteristics of devices with SiO 2 film of 50A ° and Al_2O_3 of 700A ° were measured. The results were explained based on the tunneling mechanism of the transport of electrons and holes through the thin SiO 2 layer and the electron injection from the Al electrode. In the MAOS structure, the threshold voltage drifts from the initial state to within about 23 volts. And can change under the appropriate stress field reversal control. At least 10 to 6 times more. It is believed that the charge storage time is practically infinite at room temperature and is on the order of 10 to 6 hours at 150 ° C. The failure behavior of device parameters under repeated cyclic application of electric field stress can also be considered based on the electron accumulation in the Al 2 O 3 film and at the interface of the Al 2 O 3 and SiO 2 films.