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用法国进口的ＧａＡｓＶＰＥ设备，采用ＡｓＣｌ）３／Ｈ＿２／Ｇａ体系，以ＳｎＣｌ＿４ｌ／ＡｓＣｌ＿３为掺杂液，生长了２英寸多层ＧａＡｓ外延材料，自行设计了反应器的热场分布，在反应器中增加了合适的搅拌器，用以改变反应器中气体流动情况。ＧａＡｓ外延层的浓度均匀性与厚度均匀性均小于５％。浓度均匀性的最佳值为３．７％，厚度均匀性的最佳值为１．５％，当外延层载流子浓度为１．９×１０￣（１７）ｃｍ￣（－３）时，室温迁移率达到４３９０ｃｍ￣２／Ｖ·ｓ。
In GaAsVPE equipment imported from France, a 2-inch multilayer GaAs epitaxial material was grown by using AsCl) 3 / H 2 / Ga system and SnCl_4l / AsCl_3 as doping solution. The thermal field distribution of the reactor was designed by ourselves. A suitable stirrer was added to change the gas flow in the reactor. GaAs epitaxial layer concentration uniformity and thickness uniformity are less than 5%. The optimum value of the uniformity of the concentration is 3.7%, and the optimum value of the thickness uniformity is 1.5%. When the epitaxial layer has a carrier concentration of 1.9 × 10 ~ (17) cm ~ (-3) , Room temperature mobility reached 4390cm ~ 2 / V · s.