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高速ＣＭＯＳ晶体管据《学会志》１９９３年第３期报道，日本富士通公司已制成栅长０．１７μｍ的ＣＭＯＳ晶体管，在室温下的开关速度达到２０ＰＳ，为世界最高工作速度。该公司由于控制影响高速性能的电极部分寄生电容，在一种晶体管中除制作两个栅外，还采用和现在ＬＳ...
High-speed CMOS transistors According to “Learning Society” No. 3, 1993 reported that Japan’s Fujitsu company has made gate length 0.17μm CMOS transistors at room temperature switching speed of 20PS, the world’s highest working speed. Due to the control of the parasitic capacitance of the electrode that affects high-speed performance, the company uses two transistors in addition to the two gates in a transistor.