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本文提出了第一篇综合研究铝栅和氮化硅钝化的功率GaAsFET可靠性的报告。总共265只标准的6mm栅宽器件,在直流偏置状况下,分别加射频激励和不加射频激励,做沟道温度为250℃、210℃和175℃的老化实验,业已累积一百万器件小时无突变性失效。非常保守地估计预测,在110℃正常状况下,最大沟道温度时的烧毁失效率低于100FIT。甚至在250℃的沟道温度下,电参数的退化也非常缓慢。估计缓变失效率在110℃时大大低于100FIT,很可能低于10FIT。没有观察到栅特性和欧姆接触特性劣化。特征特性揭示出样品器件的缓慢退化是由沟道材料的劣化引起的。在同样的沟道温度下,加射频激励和不加射频激励老化3000小时以上的器件,在缓变失效方面没有显著差别。目前的研究业已证明用作样品的GaAsFET是十分可靠的。
This paper presents the first comprehensive report on the reliability of power GaAsFETs with aluminum gate and silicon nitride passivation. A total of 265 standard 6mm gate-width devices were subjected to aging tests at channel temperatures of 250 ° C, 210 ° C and 175 ° C with and without radio frequency excitation under DC bias conditions, respectively, and one million devices have been accumulated No mutagenic failure in hours. A very conservative estimate predicts that at 110 ° C under normal conditions, the maximum channel temperature burnout failure rate is less than 100FIT. Even at a channel temperature of 250 ° C, the degradation of the electrical parameters is very slow. The estimated ramp-down failure rate is well below 100 FIT at 110 ° C, most likely below 10 FIT. No deterioration of gate characteristics and ohmic contact characteristics were observed. The characteristic features reveal that the slow degradation of the sample device is caused by the degradation of the channel material. At the same channel temperature, devices with and without radio frequency stimulation for more than 3,000 hours of aging showed no significant difference in ramp failure. The current research has proven that GaAsFET used as a sample is very reliable.