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为处理大规模集成电路 ,必须控制蚀刻 Si O2 的氟原子密度。日本京都大学的研究者提出用真空紫外激光吸收技术评估氟浓度的方法。在实验装置中 ,科学家用氙气双光子共振四波混频过程在 95nm产生连续可调谐紫外光。亲本气体的背景吸收和氟碳等离子体产生的成分可由扫描波长来消
To handle large scale integrated circuits, the density of fluorine atoms that etch Si O2 must be controlled. Researchers at Kyoto University in Japan proposed a method of evaluating fluorine concentration using vacuum ultraviolet laser absorption technology. In the experimental setup, scientists produced a continuously tunable ultraviolet light at 95 nm using a two-photon resonance four-wave mixing process with xenon. The background absorption of the parent gas and the composition of the fluorocarbon plasma can be canceled by the scanning wavelength