论文部分内容阅读
α-In2Se3是一类A2ⅢB3Ⅳ型宽带隙半导体材料。但在α-In2Se3化合物中共掺杂适量的Cu,Te后发现禁带宽度(Eg)变窄,Eg值由本征态时的1.32eV减小到1.14eV。掺杂后电学性能得到了大幅度的改善。最大功率因子由0.7610-4增大到2.810-4W·m-1·K-2;最大热电优值(ZT)从本征态时的0.25提高到0.63。高分辨电镜(HRTEM)观察结果表明,在未掺杂时,α-In2Se3呈现非晶状组织,共掺杂Cu,Te后,微结构则转变成明显的多晶组织。在温度高于500K时,掺杂后晶格热导率的适量提高与该微结构转变有直接联系。
α-In2Se3 is a type of A2ⅢB3Ⅳ wide-bandgap semiconductor material. However, after co-doping the α-In2Se3 with a suitable amount of Cu and Te, the forbidden band width (Eg) was found to be narrowed and the value of Eg decreased from 1.32 eV to 1.14 eV in the eigenstate. After doping electrical properties have been greatly improved. The maximum power factor increases from 0.7610-4 to 2.810-4W · m-1 · K-2 and the maximum thermoelectric figure of merit (ZT) increases from 0.25 at the eigenstate to 0.63. High-resolution electron microscopy (HRTEM) observations indicate that α-In2Se3 exhibits an amorphous structure when undoped, and co-doped with Cu and Te microstructures change into a distinct polycrystalline structure. When the temperature is higher than 500K, the appropriate increase of the lattice thermal conductivity after doping is directly related to the microstructure transformation.