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研究了CHF3 C6 H6 沉积的氟化非晶碳 (α C∶F)薄膜的光学带隙 .发现α C∶F薄膜光学带隙的大小取决于薄膜中C—F ,CC的相对含量 .这是由于CC形成的窄带隙π键和C—F形成的宽带隙σ键含量的相对变化 ,改变了带边态密度分布的结果 .在微波功率为 1 4 0— 70 0W、沉积气压为 0 1— 1 0Pa、源气体CHF3 ∶C6 H6 流量比为 1∶1— 1 0∶1条件下沉积的α C∶F薄膜 ,光学带隙在 1 76— 3 98eV之间
The optical band gap of the as-deposited amorphous carbon (α C:F) thin films deposited on CHF3 C6 H6 was investigated and the optical bandgap of α C:F thin films was found to be dependent on the relative content of C-F and CC in the films Due to the relative changes of the band gap sigma bond content formed by the narrow bandgap π bond formed by CC and the C-F, the edge density distribution is changed.When the microwave power is 140 ~ 70 0W, the deposition pressure is 0 1- 1 0Pa, the source gas CHF3: C6H6 flow ratio of 1: 1 -1 0: 1 deposition conditions α C:F film, the optical band gap in the range of 1 76- 3 98eV