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本文对 TF-SOI/MOS管,采取双栅极模型,用有限元和有限差分法分别求解沟道区的电势分布,得到了前栅(front gate)及背栅(back gate)MOS体电势二维分布.总结了指导TF-SOI-MOS 器件研制的要点.并对TF-SOI-MOS器件数值模拟方法进行了讨论.
In this paper, a dual-gate model is adopted for the TF-SOI / MOS transistor. The potential distribution in the channel region is solved by finite element method and finite difference method, respectively. The front gate and back gate MOS body potential two Dimensional distribution.This paper summarizes the key points to guide the development of TF-SOI-MOS device, and discusses the numerical simulation of TF-SOI-MOS device.