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为探讨脑微血管内皮细胞的电生理学特征 ,研究了脑微血管内皮细胞钾离子通道的应力反应性。 1.建立了开放式切应力作用装置并进行了切应力值的计算 ;2 .培养大鼠脑微血管内皮细胞并种植到 1cm× 1cm玻片上 ,采用 Axonpatch2 0 0 A型膜片钳放大器以及全细胞膜片钳技术记录脑微血管内皮细胞的应力敏感性钾通道。结果表明 :1.1dynes/ cm2剪切应力能激发脑微血管内皮细胞的应力敏感性钾通道 ,该通道电流与钳制电压有良好的相关性。脑血管内皮细胞膜上的各种应力反应与细胞膜上的应力敏感性钾通道相关。
To investigate the electrophysiological characteristics of brain microvascular endothelial cells, the stress response of potassium channel in brain microvascular endothelial cells was studied. 1. An open shear stress device was set up and the shear stress was calculated. 2. Rat brain microvascular endothelial cells were cultured and seeded on a 1 cm × 1 cm slide. Axonpatch2 0 0 A-type patch-clamp amplifier and whole cell membrane Patch-clamp technique records stress-sensitive potassium channels in brain microvascular endothelial cells. The results show that: 1.1dynes / cm2 shear stress can stimulate brain microvascular endothelial cells stress-sensitive potassium channels, the channel current and clamping voltage has a good correlation. Various stress responses on the membrane of cerebrovascular endothelial cells are associated with stress-sensitive potassium channels on the cell membrane.