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如果再进一步发展,室温下环形振荡器速度将能达到1ps左右。日本电信电话(NTT)LSI研究所已经得到室温下ECL门最快延迟为1.9ps的结果,开发了能减小集电极渡越时间的新结构AlGaAs/GaAs异质结双极晶体管。以前已经报道过2.6ps的结果,而这次进一步使器件参数最佳化,器件工作在截止频率f_T的最高点。通过取最合适的集电极i-p~+-n~+多层结构的掺杂浓度以减小电场,并使电子以高于饱和速度运动的区域变宽,f_T最高可达105GHz。
If further development, the ring oscillator speed at room temperature will be able to reach about 1ps. The NTT LSI Institute has seen the fastest delay of 1.9ps at ECL gates at room temperature as a result of the development of a new structure of AlGaAs / GaAs heterojunction bipolar transistors that can reduce the transit time of the collector. 2.6ps results have been reported previously, and this time to further optimize the device parameters, the device works at the highest point of the cutoff frequency f_T. By taking the most appropriate dopant concentration of the multi-layer structure of i-p ~ + -n ~ + collector to reduce the electric field and broaden the region of electrons moving faster than the saturation rate, f_T can reach up to 105GHz.