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采用磁控溅射(Ag/Cu/CoPt)n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜,通过优化薄膜中Ag以及Cu的含量,成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜,该膜在450℃退火即可发生相变,该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃.实验结果表明,薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向,Cu元素的加入能有效降低薄膜的有序化温度.对于特定组分为Co40Pt36Cu8Ag16的薄膜,经500℃退火后已经显示了明显的(001)取向,垂直于膜面方向上的矫顽力为5.0×105A/m,并且薄膜中晶粒尺寸仅为4—5nm,为将来CoPt-L10有序相合金薄膜用于超高密度垂直磁记录介质打下了基础.
A series of CoPtCu / Ag nanocomposite films were prepared by magnetron sputtering (Ag / Cu / CoPt) n multilayered film precursors combined with vacuum annealing. By optimizing the content of Ag and Cu in the films, low phase CoVtCu / Ag nanocomposite films with varying temperature and vertical orientation were annealed at 450 ℃ for phase transformation, which was 150 ℃ lower than the phase change temperature of the currently reported CoPtAg nanocomposite films.Experimental results show that in the films A certain amount of Ag element can effectively induce the (001) orientation of the film, and the addition of Cu element can effectively reduce the ordering temperature of the film. For the film with a specific composition of Co40Pt36Cu8Ag16, after the annealing at 500 ° C, ) Orientation, the coercivity in the direction perpendicular to the film plane is 5.0 × 10 5 A / m, and the grain size in the film is only 4 to 5 nm. It is the future CoPt-L10 ordered phase alloy film used for ultra-high density perpendicular magnetic recording Media laid the foundation.