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半导体材料CdS,CdSe薄膜因其优良的光电特性和广泛的应用前景,一直受到人们的重视.目前,许多研究组已对该膜的制备方法,结构与性能进行了比较细致的研究.Ray等对用常规真空蒸发方法制备的CdS薄膜进行了研究,发现随着膜厚度从13600A减少到1200A,膜的电阻由0.15变到3.7Ω 膜的透射率为80—90%,作者认为CdS膜具有六方结构,在(002)方向具有高度择优取向.Chuu等曾对用脉冲激光蒸发(PLE)和热蒸发(TE)方
Semiconductor materials CdS, CdSe thin films have attracted much attention because of their excellent photoelectric properties and wide application prospects.At present, many research groups have made a detailed study on the preparation methods, structures and properties of the films.Ray et al CdS films prepared by the conventional vacuum evaporation method were studied and found that as the film thickness decreased from 13600 A to 1200 A, the resistance of the film changed from 0.15 to 3.7. The transmittance of the film was 80 to 90%. The CdS film was considered to have a hexagonal structure , In the (002) direction with a high degree of preferred orientation.Chuu et al had pulsed laser evaporation (PLE) and thermal evaporation (TE) side