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为了突破传统横向双扩散金属-氧化物-半导体器件(lateral double-diffused MOSFET)击穿电压与比导通电阻的极限关系,本文在缓冲层横向双扩散超结功率器件(super junction LDMOS-SJ LDMOS)结构基础上,提出了具有缓冲层分区新型SJ-LDMOS结构.新结构利用电场调制效应将分区缓冲层产生的电场峰引入超结(super junction)表面而优化了SJ-LDMOS的表面电场分布,缓解了横向LDMOS器件由于受纵向电场影响使横向电场分布不均匀、横向单位耐压量低的问题.利用仿真分析软件ISE分析表明,优化条件下,当缓冲层分区为3时,提出的缓冲层分区SJ-LDMOS表面电场最优,击穿电压达到饱和时较一般LDMOS结构提高了50%左右,较缓冲层SJ-LDMOS结构提高了32%左右,横向单位耐压量达到18.48 V/μm.击穿电压为382 V的缓冲层分区SJ-LDMOS,比导通电阻为25.6 mΩ·cm2,突破了一般LDMOS击穿电压为254 V时比导通电阻为71.8 mΩ·cm2的极限关系.
In order to overcome the limit of the breakdown voltage and the on-resistance of the conventional lateral double-diffused MOSFET, the super junction LDMOS-SJ LDMOS ) Structure, a novel SJ-LDMOS structure with buffer layer partitioning is proposed.The new structure optimizes the surface electric field distribution of SJ-LDMOS by introducing the electric field generated by the partition buffer layer into the super junction surface by the electric field modulation effect, The lateral LDMOS device has been alleviated due to the influence of longitudinal electric field, which makes the horizontal electric field unevenly distributed and the lateral pressure resistance of the LDMOS unit low, and ISE analysis of the simulation software shows that under the optimized conditions, when the buffer layer is 3, the buffer layer The electric field on the surface of SJ-LDMOS is the best, and the breakdown voltage reaches about 50% higher than that of LDMOS. The SJ-LDMOS structure is about 32% higher and the withstand voltage of horizontal unit is 18.48 V / μm. The breakdown voltage SJ-LDMOS with a voltage of 382 V shows a specific on-resistance of 25.6 mΩ · cm 2 and a breakthrough of a typical LDMOS breakdown voltage of 254 V with an on-resistance of 71.8 mΩ · cm 2 Relations.