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A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridgewaveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW intermixing. The spectral width was broadened from the 16nm of the normal devices to 37nm of the QW intermixing enhanced devices at the same output power level. High superluminescent power (210 m W) was obtained under pulsed conditions with a spectral width of 37nm.