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介绍了用于高性能VLSI的HEMT技术现状,重点是亚微米尺寸的器件结构和HEMT LSI在超型计算机系统中的应用。制作了1.1k门总线驱动器大规模集成逻辑电路以验证室温下高速并行处理系统中(工作在10.92GFLOPS)高速数据传输。为了实现液氮温度下高时钟速率工作,还制作了最大时钟频率为1.6GHz的低温3.3k门随机数发生器大规模集成逻辑电路。采用亚微米栅和先进的材料技术,亚纳秒存取操作的HEMT64k位静态RAM和亚百皮秒逻辑延时的10k门大规模集成逻辑电路即将实现。
The current status of HEMT technology for high performance VLSI is introduced, focusing on submicron-sized device structures and the application of HEMT LSI in supercomputer systems. A 1.1k gate bus driver LSI was fabricated to verify high-speed data transfer at 10.92GFLOPS in a high-speed parallel processing system at room temperature. In order to achieve the high clock speed liquid nitrogen temperature work, but also made a maximum clock frequency of 1.6GHz low temperature 3.3k gate random number generator integrated logic. Using submicron gates and advanced materials technology, sub-nanosecond access to HEMT64k-bit static RAM and sub-picosecond logic delay of 10k gates of large-scale integrated logic is about to be realized.