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Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. AlN film as a potential candidate for buried insulator material in SOI structures is investigated. Ion beam enhanced deposition (IBED) is used to manufacture large area AlN films. SIMS measurements indicate the formation of AlN films. The characterization of the films reveals that the quality of the films strongly depends on the evaporation rate of Al. For the film with high quality deposited at 0.05 nm/s, it has higher component of N, excellent dielectric property and a smoother surface with roughness RMS value of 0.13 nm, and can be bonded directly at room temperature by the smart cut process. SOI structure with the AlN film as buried insulator has formed successfully for the first time, which is confirmed by XTEM micrograph.
Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. The characterization of the films reveals that the quality of the films strongly depends on the evaporation rate of Al. For the film with high quality deposited at 0.05 nm / s, it has higher component of N, excellent dielectric property and a smoother surface with roughness RMS value of 0.13 nm, and can be bonded directly at room temperature by the smart cut process. SOI structure with the AlN film as buried insulator has formed successfully for the first time, which is confirmed by XTEM micrograph.