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用溶胶-凝胶法在ITO基片上旋涂制备了NiO薄膜,通过对ITO/NiO薄膜/GaIn器件进行伏安特性测试,研究了溶胶浓度、退火、层数以及Cu掺杂等对其电学特性的影响。结果表明:所制备NiO薄膜具有良好可重复双极电阻开关特性。其中,2%Cu掺杂0.2 mol/L溶胶、双层、400℃退火1 h制备的薄膜,阈值电压较低,约0.8 V;而开关比受以上因素影响不明显,约3×102。分析发现薄膜高阻态的荷电输运符合空间电荷限制导电机制,而低阻态为欧姆特性,阻变开关机理为阈值电场及焦耳热导致的氧空位细丝的形成与断裂。
NiO films were spin-coated on ITO substrates by sol-gel method. The voltammetric properties of ITO / NiO thin films / GaIn devices were investigated. The effects of sol concentration, annealing, number of layers and Cu doping on their electrical properties Impact. The results show that the prepared NiO films have good repeatability bipolar resistance switching characteristics. Among them, 2% Cu doped with 0.2 mol / L sol, double-layer, annealed at 400 ℃ for 1 h had a lower threshold voltage of about 0.8 V, while the switching ratio was not affected by the above factors, about 3 × 102. It is found that charge transport in the high impedance state of the film conforms to the space-charge-limited conduction mechanism, while the low resistance state is ohmic. The resistance switching mechanism is the formation and rupture of the oxygen vacancy filaments caused by the threshold electric field and Joule heating.