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在光电子器件中使用砷化镓(GaAs)比使用硅优越,因为GaAs的电荷载流子迁移率较高,导带间隔也较宽,因而能在高温下使用。虽然GaAs材料有这些优点,但由于在GaAs上很难做成无缺陷的绝缘氧化物阻挡层,因而在光电子器件中的应用比硅少。最近
The use of gallium arsenide (GaAs) in optoelectronic devices is superior to the use of silicon because GaAs has a higher charge carrier mobility and a wider conduction band interval and therefore can be used at high temperatures. Although GaAs materials have these advantages, their application in optoelectronic devices is less than that of silicon due to the difficulty of making defect-free insulating oxide barriers on GaAs. recent