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用光致发光技术研究了未掺杂半绝缘砷化镓中的深能级缺陷,观察到一系列与其有关的光致发光.其中0.69eV发射带是源自EL2的辐射复合发光,0.77eV带是由导带至As_(Ga)施主能级的跃迁.认为1.447eV和1.32eV荧光带系分别对应于与Ga_(As)的两个电子态(38meV和203meV)有关的辐射复合.
The deep level defects in undoped semi-insulating gallium arsenide have been studied by photoluminescence technique, and a series of photoluminescences have been observed, of which the 0.69eV emission band is the radiative recombination luminescence from EL2 and the 0.77eV band Is the transition from the conduction band to the As_ (Ga) donor level, and the 1.447eV and 1.32eV fluorescence bands are considered to correspond to the radiative recombination in relation to the two electron states of Ga_As (38meV and 203meV), respectively.