【摘 要】
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We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The
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We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage (I–V ) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (253 K), the I–V behaviors are goveed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduc-tion switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of>298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.
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