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用强度可调制的光照射肖特基接触,对其短路光电流与频率的关系进行了研究。从光电流的幅度和相移都可得到在接触下面的层中的少数载流子寿命。讨论了一种应用这一原理的测量装置,用来确定硅外延层中少数载流子寿命。采用肖特基接触的主要优点是:样品制备简单;从测量中很容易估计出寿命来而且对表面条件的敏感性低。这一方法适用于层厚大于扩散长度。在较薄的层中,从光电流的频率关系只能确定衬底的少数载流子寿命
The Schottky contact was irradiated with intensity-adjustable light and the relationship between short-circuit photocurrent and frequency was studied. The minority carrier lifetime in the layer under contact can be obtained from the magnitude and phase shift of the photocurrent. A measurement device using this principle is discussed to determine the minority carrier lifetime in a silicon epitaxial layer. The main advantages of using Schottky contacts are: simple sample preparation; easy measurement of lifetime and low susceptibility to surface conditions. This method is suitable for layer thickness greater than the diffusion length. In thinner layers, only the minority carrier lifetime of the substrate can be determined from the frequency relationship of the photocurrent