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美国德克萨斯仪器公司中央研究所把二氧化硅上的多晶硅进行激火退火,用此退过火的硅制作了MOS器件(《电子学》,Nov.22,1979,p.39-40)。这种器件与蓝宝石(SOS)上硅器件相似,但是价格不同,可以廉价而简单地形成有源区。如果把此多晶硅进一步氧化,再在上面淀积多晶硅,就可用多层有源层构成集成电路。以前的集成电路,只不过是几百微米厚的有源层。而通过采用激光退火新技术,也许可能在纵方向上作出梦寐以求的
The Texas Instruments Research Institute of the United States heat-treats polycrystalline silicon on silicon dioxide to make MOS devices using this retreated silicon (“Electronics”, Nov. 22, 1979, p. 39-40) . This device is similar to a silicon on sapphire (SOS) device, but at different prices, the active region can be inexpensively and simply formed. If this polysilicon is further oxidized and then polysilicon is deposited thereon, an integrated circuit may be formed using a plurality of active layers. Previous integrated circuits were nothing but active layers hundreds of microns thick. And by using new techniques in laser annealing, it may be possible to make dreams vertically