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射频反应性溅射Cd-Sn合金靶沉积的Cd_2SnO_4(简称CTO)薄膜是n型缺陷简并半导体,并以氧空位作为施主态,载流子浓度高达4.46×10~(26)m~(-3)。从热处理前后CTO膜的透射谱中观察到明显的Burstein移动。光致发光谱的测量表明,晶态CTO膜的本征跃迁能隙约为2.156eV,并由CTO膜的电学和光学测量数据计算出热处理前后的光隙能E_(opt)为2.35eV—2.64eV和传导电子的有效质量m_e~*为0.22m_e—0.5m_e。
Cd_2SnO_4 (CTO) films deposited on RF-reactively sputtered Cd-Sn alloy targets are n-type defect degenerate semiconductors with oxygen vacancies as donor states and carrier concentrations as high as 4.46 × 10 ~ (26) m ~ (- 3). A clear Burstein shift was observed in the transmission spectra of CTO films before and after heat treatment. The measurement of photoluminescence spectra showed that the intrinsic energy gap of the crystalline CTO film was about 2.156eV, and the optical energy E opt (opt) before and after heat treatment calculated from the electrical and optical measurements of the CTO film was 2.35eV-2.64 The effective mass of eV and conduction electrons m_e ~ * is 0.22m_e-0.5m_e.