Design and Implement of Low Power Consumption SRAM Based on Single Port Sense Amplifier in 65 nm

• 作 者: Shunrui Li Jianjun Chen Zuoche
• 机 构: CollageofComputerScienceofNationalUniversityofDefenseTechnology
• 出 处: 电脑和通信(英文)
• 发表日期: 2015年11期
• 关键词: Single PORT SENSE AMPLIFIER SRAM DESIGN Low Power DESIGN 8T SRAM Single Port Sen

With the rapid development of integrated circuits [1], low power consumption has become a constant pursuiting goal of the designer in chip design. As the memory almost takes up the area of the chip, reducing memory power consumption will significantly red