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Al precipitates as well as cavities (or open-volume defects) are known for their ability to getter impurities within Si. In order to compare their relative gettering strength we produced both Al precipitates and cavities at different depths within one Si wafer. This was done by H+ and Al+ implantation with different energies and subsequent annealing process, resulting in Al-Si alloy and cavities at depth of 300 nm and 800 nm, respectively. Cu was then implanted with an energy of 70 keV to a fluence of 1 X 1014 / cm". The Cu implanted samples were annealed at temperature from 700C to 1200C. It was found that Cu impurities were gettered primarily by the precipitated Al layer rather than by cavities at the temperature of 700~1000C, while gettering of Cu occured in both regions at the temperature of 1200C. The secondary ion mass spectrometry and transmission electron microscopy analyses were used to reveal the interaction between Cu impurities and defects at different trap sites.
Al precipitates as well as cavities (or open-volume defects) are known for their ability to getter of within within Si. In order to compare their relative gettering strength within Si. by H + and Al + implantation with different energies and subsequent annealing process, resulting in Al-Si alloy and cavities at depth of 300 nm and 800 nm, respectively. Cu was then implanted with an energy of 70 keV to a fluence of 1 X 1014 / The Cu implanted samples were annealed at temperature from 700C to 1200C. It was found that Cu impurity were gettered primarily by the precipitated Al layer rather than by cavities at the temperature of 700-1000C, while gettering of Cu occured in both regions at the temperature of 1200C. The secondary ion mass spectrometry and transmission electron microscopy analyzes were used to reveal the interaction between Cu impurities and defects at different trap sites.