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通过分析总剂量辐照产生的界面陷阱的施主和受主性质 ,用半导体器件模拟软件 Medici模拟了NMOS、PMOS器件加电下辐照后的特性。结果表明 ,对于 NMOSFET,费米能级临近导带 (N沟晶体管反型 )时 ,受主型界面态为负电荷 ,施主型界面态陷阱为中性 ,使界面态陷阱将引起的阈值电压漂移 ;而对 PMOSFET,当费米能级临近价带 (P沟晶体管反型 )时 ,施主型界面态陷阱带正电荷 ,受主型界面态陷阱为中性 ,界面态陷阱将引起负的阈值电压漂移。理论模拟的转移特性与测试结果吻合。文中从器件工艺参数出发 ,初步建立了总剂量电离辐照模型 ,该模型对于评估器件总剂量加固水平提供了一种理论方法
By analyzing the donor and acceptor properties of the interface traps generated by the total dose irradiation, the simulated characteristics of the NMOS and PMOS devices after being irradiated with the power are simulated by a semiconductor device simulation software Medici. The results show that for the NMOSFET, the acceptor interface state is negatively charged when the Fermi level approaches the conduction band (N-channel transistor inversion), and the donor-interface state trap is neutral, so that the threshold voltage drift caused by the interface-state trap ; For PMOSFETs, when the Fermi level is close to the valence band (P-channel transistor inversion), the donor interface state trap has a positive charge, the acceptor interface state trap is neutral, and the interface state trap will cause a negative threshold voltage drift. The transfer characteristics of the theoretical simulation are consistent with the test results. In this paper, starting from the process parameters of the device, the total dose ionizing radiation model is initially established, which provides a theoretical method for evaluating the total dose reinforcement level of the device