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为了提高小尺寸绝缘体上硅(SOI)器件的击穿电压,同时降低器件比导通电阻,提出了一种具有L型源极场板的双槽SOI高压器件新结构.该结构具有如下特征:首先,采用了槽栅结构,使电流纵向传导面积加宽,降低了器件的比导通电阻;其次,在漂移区引入了Si O2槽型介质层,该介质层的高电场使器件的击穿电压显著提高;第三,在槽型介质层中引入了L型源极场板,该场板调制了漂移区电场,使优化漂移区掺杂浓度大幅增加,降低了器件的比导通电阻.二维数值仿真结果表明:与传统SOI结构相比,在相同器件尺寸时,新结构的击穿电压提高了151%,比导通电阻降低了20%;在相同击穿电压时,比导通电阻降低了80%.与相同器件尺寸的双槽SOI结构相比,新结构保持了双槽SOI结构的高击穿电压特性,同时,比导通电阻降低了26%.
In order to improve the breakdown voltage of small-size silicon-on-insulator (SOI) devices and reduce the specific on-resistance of the devices, a new dual-slot SOI high-voltage device with L-type source field plates is proposed. The structure has the following features: First of all, the trench gate structure is adopted to widen the vertical conduction area of the current to reduce the specific on-resistance of the device. Secondly, a Si O2 trench dielectric layer is introduced in the drift region. The high electric field of the dielectric layer breaks down the device And the voltage is significantly increased. Thirdly, an L-type source field plate is introduced into the trench dielectric layer. The field plate modulates the electric field in the drift region so that the doping concentration in the optimized drift region increases greatly and the specific on-resistance of the device is reduced. Two-dimensional numerical simulation results show that the breakdown voltage of the new structure is increased by 151% and the on-resistance is reduced by 20% at the same device size compared with the conventional SOI structure; at the same breakdown voltage, the specific conduction The resistance is reduced by 80%. The new structure maintains the high breakdown voltage of the dual-trench SOI structure with a 26% reduction in on-resistance compared to the dual-slot SOI structure of the same device size.