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新型氮化硅氢离子敏器件采用ＰＥＣＶＤ法淀积ＳｉＮｘＨｙ膜同时作敏感膜与二次钝化保护膜。改善了器件的密封性能；敏感灵敏度β＝５６～６０ｍＶ／ｐＨ，比用ＬＰＣＶＤ法淀积的Ｓｉ３Ｎ４膜提高１４％，β的线性度有明显改善；响应时间也缩短一倍。
The new silicon nitride hydrogen-sensitive devices using PECVD deposition SiNxHy film at the same time as the sensitive film and the secondary passivation film. The sensitivity of the device is improved. The sensitivity sensitivity is 56% to 60mV / pH, which is 14% higher than that of Si3N4 deposited by LPCVD. The linearity of β is obviously improved and the response time is shortened.