Design of a total-dose radiation hardened monolithic CMOS DC-DC boost converter

• 作 者: 刘智 宁红英 于洪波 刘佑宝
• 机 构: Xi\'an Institute of Microelectronics Technology,Xi\'an TAIYI Electronic Co.,Ltd,Xi\'an Univers
• 出 处: 半导体学报
• 发表日期: 2011年07期
• 关键词: converter boost hardened tolerant compensation leakage inherent instability prop

This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation.In order to improve its radiation tolerant abilities,circuit-level and device-level RHBD(radiation-hardening by design) techniques were employed.Adaptive slope compensation was used to improve the inherent instability.The H-gate MOS transistors,annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose.A boost converter was fabricated by a standard commercial 0.35μm CMOS process.The hardened design converter can work properly in a wide range of total dose radiation environments,with increasing total dose radiation.The efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.

This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation. Order to improve its radiation tolerant abilities, circuit-level and device-level RHBD (radiation-hardening by design) techniques were employed. Adaptive slope compensation was used to improve the inherent instability. The H-gate MOS transistors, annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose. A boost converter was fabricated by a standard commercial 0.35 μm CMOS process.The hardened design converter can work properly in a wide range of total dose radiation environments, with increasing total dose radiation. efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.