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在自制的立式氢化物气相外延(HVPE)系统炉中,一定温度下通入一定流量的NH3使GaAs(111)衬底氮化一层GaN薄膜,以防止高温外延生长GaN时GaAs分解,进而提高了之后GaN外延生长的晶体质量。实验主要通过XRD检测氮化层的质量,研究了氮化温度和时间对氮化层的影响。实验发现,氮化温度过高会使GaAs表面分解,氮化层为多晶。氮化时间过短,氮化层致密性低,不能起到保护衬底的作用;时间过长则氮化层质量降低,GaN(002)半高宽(FWHM)较大。分析结果表明,在500℃氮化2min的工艺条件下,获得的氮化层质量相比其他条件较好,致密性高。
In a home-made vertical hydride vapor phase epitaxy (HVPE) system furnace, a certain flow rate of NH 3 is passed through a certain flow rate to nitride a GaAs (111) substrate into a layer of GaN film to prevent GaAs from being decomposed during high-temperature epitaxial growth of GaN, Improve the quality of the GaN after the epitaxial growth of GaN. The experiment mainly examines the quality of the nitride layer by XRD and studies the influence of the nitridation temperature and time on the nitride layer. It is found that the surface of GaAs is decomposed when the nitriding temperature is too high, and the nitride layer is polycrystalline. Nitriding time is too short, nitride layer is low density, can not play a protective role of the substrate; time is too long nitride layer quality, GaN (002) FWHM larger. The results show that under the condition of 500 ℃ for 2min nitriding, the quality of the nitride layer obtained is better than other conditions and the compactness is high.