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本文采用直流反应磁控溅射技术,以Ar和N2为反应前驱气体制备了TiN功能装饰薄膜。重点研究了衬底负偏压对沉积TiN薄膜的色泽、性能及微结构的影响。采用台阶轮廓仪、X射线衍射仪、EDS能谱仪、纳米压痕仪等分析了薄膜的粗糙度、晶相、组分、纳米硬度以及弹性模量。结果表明,采用适宜的衬底负偏压调控轰击离子能量,能够有效阻止薄膜结构中空位以及缺陷的产生,从而有效避免薄膜表面的紫黑色氧化钛的生成,有利于表面光滑的金黄色TiN薄膜制备,同时使薄膜具备更优异的力学性能。实验结果还表明基体偏压可显著影响TiN薄膜的择优生长取向:随偏压增加,薄膜由(111)晶相择优生长转变为(200)晶相的择优生长,(200)晶相的薄膜比(111)晶相薄膜具有更佳的力学性能。
In this paper, DC reactive magnetron sputtering technology to Ar and N2 as a precursor gas reaction TiN functional decorative film was prepared. The effects of substrate negative bias on the color, properties and microstructure of TiN thin films were investigated. The roughness, crystal phase, composition, nanohardness and elastic modulus of the films were analyzed by using step profiler, X-ray diffraction, EDS, nanoindentation and so on. The results show that adjusting the energy of ion bombardment with appropriate substrate negative bias can effectively prevent the vacancy and defects in the film structure and effectively prevent the formation of purple black titanium oxide on the surface of the film and is favorable for the smooth surface of the golden yellow TiN film Preparation, while making the film have more excellent mechanical properties. The experimental results also show that the substrate bias can significantly influence the preferred growth orientation of TiN thin films. With the increase of bias voltage, the preferred growth of (111) (111) crystalline film has better mechanical properties.