论文部分内容阅读
Hg_(1-x)Cd_xTe是窄禁带半导体材料,适于制备高质量的本征光电导红外探测器,而且可以通过控制x值,分别制备出响应波段在1～3μm,3～5μm,8～14μm,16～22μm的探测器。Hg_(1-x)Cd_xTe材料的吸收系数一般大于10~3 cm~(-1),要求探测器厚度小于10μm。利用Hg_(1-x)Cd_xTe材料的这些特点,可以制备出叠层多色光电导探测器,上层是响应波长较短的探测器,下层是响应波长较长的探测器,利用短波探测器作为滤光片,滤去短波辐射,让大于
Hg_ (1-x) Cd_xTe is a narrow-bandgap semiconductor material suitable for the preparation of high-quality intrinsic photoconductive infrared detectors, and can be prepared by controlling the value of x, the response band in the 1-3μm, 3-5μm, 8 ~ 14μm, 16 ~ 22μm detector. The absorption coefficient of Hg_ (1-x) Cd_xTe material is generally larger than 10 ~ 3 cm -1, and the detector thickness is less than 10 μm. Based on these characteristics of Hg_ (1-x) Cd_xTe materials, multi-color photoconductive detectors can be fabricated. The upper layer is a detector with shorter response wavelength and the lower layer is a detector with longer response wavelength. The short wavelength detector is used as Filter, filter shortwave radiation, so that more than