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根据光增益与载流子密度的对数关系 ,通过适应于多量子阱激光器的速率方程的直接模拟分析 ,得到了注入电流、阱数和腔长对多量子阱激光器的激射阈值、开关延迟时间、弛豫振荡频率和光输出等参量之间的依赖关系 .运用相图确立了在瞬态过程中 ,载流子数密度和光子数密度之间的转化过程 .从而为改善量子阱激光器的高频调制特性以及优化设计器件结构参数提供了理论依据
According to the logarithm relationship between optical gain and carrier density, the lasing threshold of injection current, well number and cavity length for multiple quantum well laser is obtained through the direct simulation of rate equation adapted to multi-quantum well laser. The switching delay Time, frequency of relaxation oscillation and optical output, etc .. The phase diagram is used to establish the conversion process between carrier density and photon number density in the transient process, so as to improve the high quantum well laser’s high Frequency modulation characteristics and optimize the design parameters of the device structure provides a theoretical basis