InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

• 作 者: 于进勇 刘新宇 夏洋
• 机 构: Microelectronic Devices and Integration Technology Key Laboratory of Chinese Academy of Sciences,Ins
• 出 处: 半导体学报
• 发表日期: 2009年11期
• 关键词: bipolar emitter bridges cutoff narrow capacitance etching fabricate aligned osci

Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported.The radio frequency measurement results of these InP HBTs are compared with each other.The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect.Due to the utilization of the double μ-bridges,both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2×12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz.The results also show that theμ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.

Several μ-bridge structures for the InP-based heterojunction bipolar transistors (HBTs) are reported. The radio frequency measurement results of these InP HBTs are compared with each other. The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect. Due to the utilization of the double μ-bridges, both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2 × 12.5 μm2 InP / InGaAs HBT reach nearly 160 GHz. The results also show that the μ- bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.